transistor(pnp) features z for general amplification z complementary to 2sd601a maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -45 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -7 v i c collector current -continuous -100 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -10 a, i e =0 -45 v collector-emitter breakdown voltage v (br)ceo i c = -2ma, i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -7 v collector cut-off current i cbo v cb = -20 v, i e =0 -0.1 a collector cut-off current i ceo v ce = -10v, i b =0 -100 a dc current gain h fe v ce = -10v,i c = -2ma 160 460 collector-emitter saturation voltage v ce (sat) i c =-100 ma, i b = -10ma -0.5 v transition frequency f t v ce = -10v, i c = -1ma f= 200mhz 60 mhz collector output capacitance c ob v cb = -10v, i e = 0 f=1 mhz 2.7 pf classification of h fe rank q r s range 160-260 210-340 290-460 marking bq1 br1 bs1 sot-23 1. base 2. emitter 3. collector 2sb7 09a 1 date:2011/05 www.htsemi.com semiconductor jinyu
2sb7 09a 2 date:2011/05 www.htsemi.com semiconductor jinyu
2sb7 09a 3 date:2011/05 www.htsemi.com semiconductor jinyu
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